DMC3036LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

4.5A

Number of Channels :

2

Height :

1.5mm

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Published :

2011

Drain-source On Resistance-Max :

0.036Ohm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5A 4.5A

Number of Terminations :

8

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Additional Feature :

High Reliability

Input Capacitance (Ciss) (Max) @ Vds :

431pF @ 15V

Radiation Hardening :

No

Mount :

Surface Mount

Mounting Type :

Surface Mount

Pbfree Code :

yes

Max Power Dissipation :

1.5W

Weight :

73.992255mg

Operating Mode :

ENHANCEMENT MODE

Width :

4.1mm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

6.9A

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

Rds On (Max) @ Id, Vgs :

36m Ω @ 6.9A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Number of Pins :

8

Terminal Form :

Gull wing

Length :

5.3mm