DMC3036LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

431pF @ 15V

Drain-source On Resistance-Max :

0.036Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Number of Channels :

2

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mount :

Surface Mount

Max Power Dissipation :

1.5W

Published :

2011

Pbfree Code :

yes

FET Type :

N and P-Channel

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

4.5A

Height :

1.5mm

Drain Current-Max (Abs) (ID) :

6.9A

Number of Elements :

2

Terminal Position :

Dual

Weight :

73.992255mg

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

5A 4.5A

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

36m Ω @ 6.9A, 10V

Peak Reflow Temperature (Cel) :

260

Additional Feature :

High Reliability

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5.3mm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Width :

4.1mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

ECCN Code :

EAR99