DMC3035LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

6.9A

FET Type :

N and P-Channel

Additional Feature :

High Reliability

JESD-609 Code :

e3

Weight :

850.995985mg

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.035Ohm

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Length :

5.3mm

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

384pF @ 15V

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Terminal Form :

Gull wing

Published :

2012

Pulsed Drain Current-Max (IDM) :

30A

Max Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Number of Elements :

2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.9A, 10V

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.5mm

Width :

4.1mm

Transistor Element Material :

SILICON

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

6.9A 5A

Packaging :

Tape and Reel (TR)