DMC3028LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2.1W

Rise Time :

4.9ns

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Mounting Type :

Surface Mount

Fall Time (Typ) :

28 ns

Weight :

73.992255mg

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

7.4A

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1.8W

Length :

5mm

JESD-609 Code :

e3

Lead Free :

Lead Free

Packaging :

Digi-Reel®

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

5.5A

Base Part Number :

DMC3028LSD

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

6.6A 6.8A

Input Capacitance (Ciss) (Max) @ Vds :

472pF @ 15V

Published :

2009

Number of Terminations :

8

Turn On Delay Time :

3.5 ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

Number of Elements :

2

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

44 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Radiation Hardening :

No

Height :

1.5mm