DMC2710UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Number of Elements :

2

JESD-30 Code :

R-PDSO-F6

Drain Current-Max (Abs) (ID) :

1.1A

Input Capacitance (Ciss) (Max) @ Vds :

42pF 49pF @ 16V

Power - Max :

460mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.4Ohm

FET Type :

N and P-Channel Complementary

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta 800mA Ta

Factory Lead Time :

24 Weeks

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

20V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

0.8W

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

600pC, 700pC @ 4.5V

Rds On (Max) @ Id, Vgs :

400m Ω @ 600mA, 4.5V, 700m Ω @ 430mA, 4.5V

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1V @ 250μA