DMA5610M0R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Reach Compliance Code :

Unknown

Width :

1.25mm

Factory Lead Time :

10 Weeks

Collector Emitter Voltage (VCEO) :

-50V

Max Power Dissipation :

150mW

Resistor - Emitter Base (R2) :

47k Ω

Resistor - Base (R1) :

2.2k Ω

Polarity :

PNP

Collector Emitter Saturation Voltage :

-250mV

Continuous Collector Current :

-100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Transistor Type :

2 PNP - Pre-Biased (Dual)

Length :

2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-SMD (5 Leads), Flat Lead

Mount :

Surface Mount

Number of Pins :

5

Current - Collector Cutoff (Max) :

500nA

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 21.36

RoHS Status :

RoHS Compliant

Base Part Number :

DMA5610

Height :

600μm

ECCN Code :

EAR99

Number of Terminations :

5

Transistor Application :

SWITCHING

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED