DMA506010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

RoHS Status :

RoHS Compliant

Width :

1.25mm

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Mounting Type :

Surface Mount

Package / Case :

6-SMD, Flat Leads

Factory Lead Time :

10 Weeks

Max Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Element Configuration :

Dual

Power - Max :

300mW

HTS Code :

8541.21.00.75

hFE Min :

210

Height :

600μm

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Polarity :

PNP

Number of Pins :

6

Emitter Base Voltage (VEBO) :

-7V

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Published :

2010

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Saturation Voltage :

-500mV

Number of Elements :

2

Base Part Number :

DMA50601

Transistor Type :

2 PNP (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Length :

2mm

Gain Bandwidth Product :

150MHz

Collector Emitter Voltage (VCEO) :

500mV

Continuous Collector Current :

-100mA

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Transition Frequency :

150MHz