D44H8G

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Mfr.Part #
D44H8G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 10A TO220
Stock
8,424
In Stock :
8,424

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-220-3
JESD-609 Code :
e3
Number of Terminations :
3
Max Power Dissipation :
2W
Surface Mount :
No
Current - Collector Cutoff (Max) :
10μA
Collector Emitter Breakdown Voltage :
60V
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
ECCN Code :
EAR99
Height :
19.85mm
Case Connection :
COLLECTOR
Weight :
4.535924g
Peak Reflow Temperature (Cel) :
260
Voltage - Rated DC :
60V
Base Part Number :
D44H
Packaging :
Tube
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
5V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
NPN
Contact Plating :
Tin
Factory Lead Time :
8 Weeks
Max Collector Current :
10A
Max Junction Temperature (Tj) :
150°C
Collector Emitter Saturation Voltage :
1V
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
60V
Time@Peak Reflow Temperature-Max (s) :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Polarity/Channel Type :
NPN
Mounting Type :
Through Hole
Frequency :
50MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2004
Radiation Hardening :
No
Pin Count :
3
Current Rating :
10A
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Length :
10.2616mm
Number of Pins :
3
Collector Base Voltage (VCBO) :
60V
Number of Elements :
1
Width :
4.826mm
Transition Frequency :
50MHz
Element Configuration :
Single
Gain Bandwidth Product :
50MHz
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Power Dissipation :
2W
REACH SVHC :
No SVHC
hFE Min :
40
Datasheets
D44H8G
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H8G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Base Part Number:D44H, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, D44H8G pinout, D44H8G datasheet PDF, D44H8G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H8G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H8G


NPN -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H8G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.

D44H8G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


D44H8G Applications


There are a lot of ON Semiconductor
D44H8G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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