D44H8G
- Mfr.Part #
- D44H8G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A TO220
- Stock
- 8,424
- In Stock :
- 8,424
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 2W
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- ECCN Code :
- EAR99
- Height :
- 19.85mm
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 60V
- Base Part Number :
- D44H
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 10A
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Saturation Voltage :
- 1V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Frequency :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Radiation Hardening :
- No
- Pin Count :
- 3
- Current Rating :
- 10A
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Length :
- 10.2616mm
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Width :
- 4.826mm
- Transition Frequency :
- 50MHz
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 50MHz
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 2W
- REACH SVHC :
- No SVHC
- hFE Min :
- 40
- Datasheets
- D44H8G

NPN -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
D44H8G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.
D44H8G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
D44H8G Applications
There are a lot of ON Semiconductor
D44H8G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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