D44H11TU
- Mfr.Part #
- D44H11TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220-3
- Stock
- 27,706
- In Stock :
- 27,706
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1.67W
- Factory Lead Time :
- 5 Weeks
- Published :
- 2009
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Width :
- 4.83mm
- Frequency :
- 50MHz
- Transition Frequency :
- 50MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Length :
- 10.67mm
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 1.67W
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Base Part Number :
- D44H
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Packaging :
- Tube
- Height :
- 16.51mm
- hFE Min :
- 60
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Contact Plating :
- Tin
- Package / Case :
- TO-220-3
- Weight :
- 1.8g
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Collector Base Voltage (VCBO) :
- 80V
- Power - Max :
- 60W
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10μA
- Max Breakdown Voltage :
- 300V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 10A
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- Datasheets
- D44H11TU
D44H11TU Documents

NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
D44H11TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 10A volts at its maximum.
D44H11TU Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
D44H11TU Applications
There are a lot of ON Semiconductor
D44H11TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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