D44H11TU

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Mfr.Part #
D44H11TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO220-3
Stock
27,706
In Stock :
27,706

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
5V
REACH SVHC :
No SVHC
Max Power Dissipation :
1.67W
Factory Lead Time :
5 Weeks
Published :
2009
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
80V
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Width :
4.83mm
Frequency :
50MHz
Transition Frequency :
50MHz
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
Length :
10.67mm
Element Configuration :
Single
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Power Dissipation :
1.67W
Number of Terminations :
3
ECCN Code :
EAR99
Base Part Number :
D44H
Mounting Type :
Through Hole
Pbfree Code :
yes
Packaging :
Tube
Height :
16.51mm
hFE Min :
60
Polarity/Channel Type :
NPN
Collector Emitter Saturation Voltage :
1V
Contact Plating :
Tin
Package / Case :
TO-220-3
Weight :
1.8g
Operating Temperature :
150°C TJ
Gain Bandwidth Product :
50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Collector Base Voltage (VCBO) :
80V
Power - Max :
60W
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
10μA
Max Breakdown Voltage :
300V
Number of Elements :
1
Transistor Element Material :
SILICON
Max Collector Current :
10A
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
80V
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H11TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Base Part Number:D44H, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:150°C TJ, D44H11TU pinout, D44H11TU datasheet PDF, D44H11TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H11TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H11TU


NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H11TU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 10A volts at its maximum.

D44H11TU Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz


D44H11TU Applications


There are a lot of ON Semiconductor
D44H11TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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