D44H11TU
- Mfr.Part #
- D44H11TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO220-3
- Stock
- 27,706
- In Stock :
- 27,706
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 50MHz
- Height :
- 16.51mm
- Length :
- 10.67mm
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Width :
- 4.83mm
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.67W
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 10A
- Factory Lead Time :
- 5 Weeks
- Current - Collector Cutoff (Max) :
- 10μA
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Frequency :
- 50MHz
- Power Dissipation :
- 1.67W
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Transition Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Number of Terminations :
- 3
- Weight :
- 1.8g
- Base Part Number :
- D44H
- Power - Max :
- 60W
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 300V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 60
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Datasheets
- D44H11TU
D44H11TU Documents

NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
D44H11TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 10A volts at its maximum.
D44H11TU Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
D44H11TU Applications
There are a lot of ON Semiconductor
D44H11TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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