D44H11G

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Mfr.Part #
D44H11G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO220
Stock
14,683
In Stock :
14,683

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
RoHS Status :
ROHS3 Compliant
hFE Min :
60
JEDEC-95 Code :
TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Length :
10.28mm
Max Power Dissipation :
2W
Operating Temperature :
-55°C~150°C TJ
Width :
4.82mm
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Power Dissipation :
2W
Transistor Type :
NPN
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
Collector Base Voltage (VCBO) :
80V
Polarity/Channel Type :
NPN
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Lead Free :
Lead Free
Package / Case :
TO-220-3
Peak Reflow Temperature (Cel) :
260
Frequency :
50MHz
Height :
9.28mm
Radiation Hardening :
No
Number of Pins :
3
Number of Elements :
1
Factory Lead Time :
7 Weeks
Weight :
4.535924g
Emitter Base Voltage (VEBO) :
5V
JESD-609 Code :
e3
Max Collector Current :
10A
Collector Emitter Voltage (VCEO) :
80V
Current - Collector Cutoff (Max) :
10μA
Number of Terminations :
3
Published :
2005
Contact Plating :
Tin
Base Part Number :
D44H
Transition Frequency :
50MHz
Pbfree Code :
yes
Transistor Application :
SWITCHING
Voltage - Rated DC :
80V
Current Rating :
10A
Gain Bandwidth Product :
50MHz
Packaging :
Tube
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
1V
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
80V
REACH SVHC :
No SVHC
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H11G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, Base Part Number:D44H, D44H11G pinout, D44H11G datasheet PDF, D44H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H11G


NPN -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H11G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.

D44H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


D44H11G Applications


There are a lot of ON Semiconductor
D44H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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