D44H11G

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Mfr.Part #
D44H11G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO220
Stock
14,683
In Stock :
14,683

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
50MHz
Time@Peak Reflow Temperature-Max (s) :
40
Height :
9.28mm
Current - Collector Cutoff (Max) :
10μA
Emitter Base Voltage (VEBO) :
5V
Base Part Number :
D44H
Published :
2005
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Collector Emitter Saturation Voltage :
1V
Number of Terminations :
3
Voltage - Rated DC :
80V
Gain Bandwidth Product :
50MHz
Transition Frequency :
50MHz
Transistor Element Material :
SILICON
Factory Lead Time :
7 Weeks
hFE Min :
60
Transistor Type :
NPN
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Number of Pins :
3
Package / Case :
TO-220-3
Width :
4.82mm
Length :
10.28mm
Max Collector Current :
10A
Number of Elements :
1
REACH SVHC :
No SVHC
Packaging :
Tube
Contact Plating :
Tin
Pin Count :
3
Current Rating :
10A
Max Power Dissipation :
2W
Power Dissipation :
2W
Polarity/Channel Type :
NPN
JESD-609 Code :
e3
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Case Connection :
COLLECTOR
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Collector Base Voltage (VCBO) :
80V
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-55°C~150°C TJ
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
260
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
80V
Surface Mount :
No
Weight :
4.535924g
Collector Emitter Voltage (VCEO) :
80V
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H11G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:D44H, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, D44H11G pinout, D44H11G datasheet PDF, D44H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H11G


NPN -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H11G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.

D44H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


D44H11G Applications


There are a lot of ON Semiconductor
D44H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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