CYD18S18V18-200BBAXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Factory Lead Time :

12 Weeks

Pin Count :

256

Word Size :

18b

Number of Terminations :

256

JESD-609 Code :

e1

Number of Functions :

1

Package / Case :

256-LBGA

Number of Ports :

2

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

0°C~70°C TA

Memory Size :

18Mb 1M x 18

Sync/Async :

SYNCHRONOUS

Supply Voltage-Max (Vsup) :

1.58V

Output Characteristics :

3-STATE

Access Time :

3.3ns

Supply Voltage :

1.5V

Memory Format :

SRAM

Packaging :

Tray

Terminal Pitch :

1mm

Length :

17mm

Memory Interface :

Parallel

Memory Width :

18

Lead Free :

Lead Free

Terminal Position :

BOTTOM

Density :

18 Mb

Memory Type :

Volatile

Published :

2011

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Organization :

1MX18

Base Part Number :

CYD18S18

Number of Pins :

256

Height Seated (Max) :

1.7mm

Address Bus Width :

20b

Nominal Supply Current :

770mA

Standby Current-Max :

0.3A

Radiation Hardening :

No

I/O Type :

COMMON

Standby Voltage-Min :

1.4V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Supply Voltage :

1.8V

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

Mounting Type :

Surface Mount

Clock Frequency :

200MHz