CYD18S18V18-200BBAXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Radiation Hardening :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Length :

17mm

Clock Frequency :

200MHz

Standby Voltage-Min :

1.4V

Factory Lead Time :

12 Weeks

Output Characteristics :

3-STATE

Memory Type :

Volatile

Published :

2011

Word Size :

18b

Access Time :

3.3ns

Memory Interface :

Parallel

Mount :

Surface Mount

Terminal Pitch :

1mm

Memory Width :

18

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

SRAM

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

Address Bus Width :

20b

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

Nominal Supply Current :

770mA

Mounting Type :

Surface Mount

Packaging :

Tray

JESD-609 Code :

e1

Standby Current-Max :

0.3A

Memory Size :

18Mb 1M x 18

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Organization :

1MX18

Density :

18 Mb

Time@Peak Reflow Temperature-Max (s) :

30

Number of Ports :

2

Supply Voltage-Max (Vsup) :

1.58V

Terminal Position :

BOTTOM

Operating Temperature :

0°C~70°C TA

Supply Voltage :

1.5V

I/O Type :

COMMON

Height Seated (Max) :

1.7mm

Sync/Async :

SYNCHRONOUS

Pin Count :

256

Base Part Number :

CYD18S18

Number of Terminations :

256

Package / Case :

256-LBGA

Number of Pins :

256

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Operating Supply Voltage :

1.8V