CYD18S18V18-167BBAXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Pin Count :

256

Organization :

1MX18

Number of Functions :

1

Supply Voltage-Min (Vsup) :

1.42 V

ECCN Code :

3A991.B.2.A

Memory Format :

SRAM

Qualification Status :

Not Qualified

Package :

Bulk

Width :

17 mm

Memory Organization :

1M x 18

Write Cycle Time - Word, Page :

-

Subcategory :

SRAMs

Output Characteristics :

3-STATE

Manufacturer :

Cypress Semiconductor

Reach Compliance Code :

Compliant

Standby Voltage-Min :

1.4 V

Terminal Pitch :

1 mm

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Parallel/Serial :

Parallel

Length :

17 mm

Memory Interface :

Parallel

Technology :

SRAM - Dual Port, Asynchronous, Standard

Power Supplies :

1.5/1.8 V

Peak Reflow Temperature (Cel) :

260

Base Product Number :

CYD18S18

JESD-609 Code :

e1

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Memory Width :

18

Operating Mode :

SYNCHRONOUS

Terminal Form :

Ball

Product Status :

Active

Package / Case :

256-LBGA

Temperature Grade :

COMMERCIAL

Voltage - Supply :

1.42V ~ 1.58V, 1.7V ~ 1.9V

Memory Type :

Volatile

Supply Voltage-Max (Vsup) :

1.58 V

Supplier Device Package :

256-FBGA (17x17)

JESD-30 Code :

S-PBGA-B256

Memory IC Type :

DUAL-PORT SRAM

Seated Height-Max :

1.7 mm

Surface Mount :

yes

Series :

-

Supply Current-Max :

0.69 mA

Clock Frequency :

167 MHz

Operating Temperature :

0°C ~ 70°C (TA)

Memory Size :

18Mbit

Package Shape :

Square

I/O Type :

COMMON

Access Time :

4 ns

Number of Ports :

2

Number of Terminals :

256

Memory Density :

18874368 bit

RoHS :

Compliant

HTS Code :

8542.32.00.41

Number of Words :

1048576 words

Standby Current-Max :

0.3 A