BUL770-S

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Mfr.Part #
BUL770-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 2.5A TO220
Stock
12,856
In Stock :
12,856

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e1
Collector Base Voltage (VCBO) :
700V
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
400V
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Packaging :
Bulk
Current - Collector Cutoff (Max) :
10μA
Published :
1993
Mounting Type :
Through Hole
Terminal Finish :
TIN SILVER COPPER
Max Operating Temperature :
150°C
ECCN Code :
EAR99
Package / Case :
TO-220-3
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Case Connection :
COLLECTOR
Base Part Number :
BUL770
Polarity/Channel Type :
NPN
Max Collector Current :
2.5A
JEDEC-95 Code :
TO-220AB
Emitter Base Voltage (VEBO) :
9V
Max Power Dissipation :
50W
Transistor Type :
NPN
Number of Pins :
3
Power Dissipation :
50W
Collector Emitter Voltage (VCEO) :
400V
Mount :
Through Hole
Number of Terminations :
3
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
250mV @ 160mA, 800mA
Pbfree Code :
yes
Min Operating Temperature :
-65°C
DC Current Gain (hFE) (Min) @ Ic, Vce :
7 @ 800mA 1V
Configuration :
Single
Datasheets
BUL770-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BUL770-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BUL770, Number of Pins:3, Number of Terminations:3, BUL770-S pinout, BUL770-S datasheet PDF, BUL770-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BUL770-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BUL770-S


NPN 10μA 1 Elements 3 Terminations NPN TO-220-3 Bulk Through Hole

BUL770-S Overview


DC current gain in this device equals 7 @ 800mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 160mA, 800mA.An emitter's base voltage can be kept at 9V to gain high efficiency.In extreme cases, the collector current can be as low as 2.5A volts.

BUL770-S Features


the DC current gain for this device is 7 @ 800mA 1V
the vce saturation(Max) is 250mV @ 160mA, 800mA
the emitter base voltage is kept at 9V


BUL770-S Applications


There are a lot of Bourns Inc.
BUL770-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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