BUL743
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- Mfr.Part #
- BUL743
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 12A TO220
- Stock
- 19,836
- In Stock ：
- 19,836
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 500V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 100W
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 250μA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2.5A, 10A
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 24 @ 2A 3V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PSFM-T3
- hFE Min :
- 24
- Transistor Type :
- NPN
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 100W
- Collector Emitter Saturation Voltage :
- 150mV
- Number of Terminations :
- 3
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 15V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Base Part Number :
- BUL743
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 12A
- Datasheets
- BUL743
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL743 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 24 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 2.5A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 15V.During maximum operation, collector current can be as low as 12A volts.
BUL743 Features
the DC current gain for this device is 24 @ 2A 3V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 1.5V @ 2.5A, 10A
the emitter base voltage is kept at 15V
BUL743 Applications
There are a lot of STMicroelectronics
BUL743 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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