BUL743
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- Mfr.Part #
- BUL743
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 12A TO220
- Stock
- 19,836
- In Stock ：
- 19,836
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 150mV
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2.5A, 10A
- Emitter Base Voltage (VEBO) :
- 15V
- Collector Emitter Voltage (VCEO) :
- 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 24 @ 2A 3V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- hFE Min :
- 24
- Mount :
- Through Hole
- Base Part Number :
- BUL743
- Max Power Dissipation :
- 100W
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 250μA
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 500V
- Power Dissipation :
- 100W
- Number of Elements :
- 1
- Max Collector Current :
- 12A
- Package / Case :
- TO-220-3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Datasheets
- BUL743
BUL743 Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL743 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 24 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 2.5A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 15V.During maximum operation, collector current can be as low as 12A volts.
BUL743 Features
the DC current gain for this device is 24 @ 2A 3V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 1.5V @ 2.5A, 10A
the emitter base voltage is kept at 15V
BUL743 Applications
There are a lot of STMicroelectronics
BUL743 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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