BUL742A

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Mfr.Part #
BUL742A
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220
Stock
16,857
In Stock :
16,857

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
16 @ 800mA 3V
Voltage - Rated DC :
400V
Operating Temperature :
150°C TJ
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
Max Power Dissipation :
70W
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Mount :
Through Hole
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
hFE Min :
10
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
12V
Transistor Type :
NPN
Current Rating :
4A
Package / Case :
TO-220-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
400V
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Max Collector Current :
4A
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3.5A
Base Part Number :
BUL742
Pin Count :
3
Current - Collector Cutoff (Max) :
250μA
Lead Free :
Contains Lead
Collector Emitter Voltage (VCEO) :
1.5V
Collector Base Voltage (VCBO) :
950V
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL742A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Base Part Number:BUL742, BUL742A pinout, BUL742A datasheet PDF, BUL742A amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL742A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL742A


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL742A Overview


In this device, the DC current gain is 16 @ 800mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 3.5A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).Maximum collector currents can be below 4A volts.

BUL742A Features


the DC current gain for this device is 16 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 12V
the current rating of this device is 4A


BUL742A Applications


There are a lot of STMicroelectronics
BUL742A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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