BUL3P5
- Mfr.Part #
- BUL3P5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 400V 3A TO220
- Stock
- 47,493
- In Stock :
- 47,493
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Collector Emitter Breakdown Voltage :
- 400V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 60W
- Number of Terminations :
- 3
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 3A
- JESD-30 Code :
- R-PSFM-T3
- Terminal Finish :
- Matte Tin (Sn)
- Power - Max :
- 60W
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Base Part Number :
- BUL3P5
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 18 @ 700mA 5V
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 10
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 500V
- Packaging :
- Tube
- Datasheets
- BUL3P5
BUL3P5 Documents

PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BUL3P5 Overview
In this device, the DC current gain is 18 @ 700mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
BUL3P5 Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BUL3P5 Applications
There are a lot of STMicroelectronics
BUL3P5 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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