BUL3P5
- Mfr.Part #
- BUL3P5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 400V 3A TO220
- Stock
- 47,493
- In Stock :
- 47,493
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Power - Max :
- 60W
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 18 @ 700mA 5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-30 Code :
- R-PSFM-T3
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- BUL3P5
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 500V
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tube
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Max Power Dissipation :
- 60W
- Collector Emitter Voltage (VCEO) :
- 500mV
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- hFE Min :
- 10
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Datasheets
- BUL3P5

PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BUL3P5 Overview
In this device, the DC current gain is 18 @ 700mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
BUL3P5 Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BUL3P5 Applications
There are a lot of STMicroelectronics
BUL3P5 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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