BUL381D

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Mfr.Part #
BUL381D
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 5A TO220
Stock
3,614
In Stock :
3,614

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Additional Feature :
High Reliability
Packaging :
Tube
Length :
10.4mm
Collector Base Voltage (VCBO) :
800V
Max Collector Current :
5A
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
9V
Max Power Dissipation :
70W
Width :
4.6mm
Number of Terminations :
3
Factory Lead Time :
8 Weeks
Current - Collector Cutoff (Max) :
250μA
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
JEDEC-95 Code :
TO-220AB
hFE Min :
10
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
400V
Transistor Application :
SWITCHING
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Current Rating :
5A
Number of Elements :
1
Package / Case :
TO-220-3
Number of Pins :
3
Base Part Number :
BUL381
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
400V
Vce Saturation (Max) @ Ib, Ic :
1.1V @ 750mA, 3A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Power Dissipation :
70W
Height :
15.75mm
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1.1V
Pin Count :
3
Mounting Type :
Through Hole
Voltage - Rated DC :
400V
Lead Free :
Lead Free
Mount :
Through Hole
ECCN Code :
EAR99
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL381D from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Base Part Number:BUL381, Mounting Type:Through Hole, BUL381D pinout, BUL381D datasheet PDF, BUL381D amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL381D ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL381D


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL381D Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 1.1V @ 750mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.A maximum collector current of 5A volts can be achieved.

BUL381D Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 750mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 5A


BUL381D Applications


There are a lot of STMicroelectronics
BUL381D applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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