BUL381D

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Mfr.Part #
BUL381D
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 5A TO220
Stock
3,614
In Stock :
3,614

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
9V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Collector Emitter Saturation Voltage :
1.1V
Max Collector Current :
5A
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Element Configuration :
Single
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
400V
Power Dissipation :
70W
Mounting Type :
Through Hole
ECCN Code :
EAR99
Transistor Type :
NPN
Polarity/Channel Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1.1V @ 750mA, 3A
Contact Plating :
Tin
Mount :
Through Hole
Packaging :
Tube
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Additional Feature :
High Reliability
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
400V
JEDEC-95 Code :
TO-220AB
Number of Pins :
3
Number of Terminations :
3
Voltage - Rated DC :
400V
Radiation Hardening :
No
Height :
15.75mm
Current Rating :
5A
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
hFE Min :
10
Pin Count :
3
Length :
10.4mm
Width :
4.6mm
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
250μA
Collector Base Voltage (VCBO) :
800V
Max Power Dissipation :
70W
Package / Case :
TO-220-3
Factory Lead Time :
8 Weeks
Base Part Number :
BUL381
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL381D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, Base Part Number:BUL381, BUL381D pinout, BUL381D datasheet PDF, BUL381D amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL381D ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL381D


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL381D Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 1.1V @ 750mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.A maximum collector current of 5A volts can be achieved.

BUL381D Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 750mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 5A


BUL381D Applications


There are a lot of STMicroelectronics
BUL381D applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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