BUL381D

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Mfr.Part #
BUL381D
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 5A TO220
Stock
3,614
In Stock :
3,614

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
800V
Additional Feature :
High Reliability
Max Power Dissipation :
70W
Collector Emitter Breakdown Voltage :
400V
Vce Saturation (Max) @ Ib, Ic :
1.1V @ 750mA, 3A
Number of Pins :
3
Max Collector Current :
5A
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
JEDEC-95 Code :
TO-220AB
Package / Case :
TO-220-3
Transistor Type :
NPN
Polarity/Channel Type :
NPN
Factory Lead Time :
8 Weeks
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Height :
15.75mm
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
250μA
Collector Emitter Voltage (VCEO) :
400V
Current Rating :
5A
Contact Plating :
Tin
Number of Terminations :
3
Power Dissipation :
70W
Element Configuration :
Single
Length :
10.4mm
Mounting Type :
Through Hole
Voltage - Rated DC :
400V
Width :
4.6mm
Mount :
Through Hole
Transistor Application :
SWITCHING
Base Part Number :
BUL381
Collector Emitter Saturation Voltage :
1.1V
Emitter Base Voltage (VEBO) :
9V
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Packaging :
Tube
Pin Count :
3
hFE Min :
10
ECCN Code :
EAR99
Radiation Hardening :
No
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL381D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BUL381, BUL381D pinout, BUL381D datasheet PDF, BUL381D amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL381D ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL381D


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUL381D Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 1.1V @ 750mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.A maximum collector current of 5A volts can be achieved.

BUL381D Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 750mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 5A


BUL381D Applications


There are a lot of STMicroelectronics
BUL381D applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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