BUL381D
- Mfr.Part #
- BUL381D
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 5A TO220
- Stock
- 3,614
- In Stock :
- 3,614
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 800V
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 70W
- Collector Emitter Breakdown Voltage :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 750mA, 3A
- Number of Pins :
- 3
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Height :
- 15.75mm
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 250μA
- Collector Emitter Voltage (VCEO) :
- 400V
- Current Rating :
- 5A
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Power Dissipation :
- 70W
- Element Configuration :
- Single
- Length :
- 10.4mm
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 400V
- Width :
- 4.6mm
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Base Part Number :
- BUL381
- Collector Emitter Saturation Voltage :
- 1.1V
- Emitter Base Voltage (VEBO) :
- 9V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Packaging :
- Tube
- Pin Count :
- 3
- hFE Min :
- 10
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Datasheets
- BUL381D
BUL381D Documents

NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL381D Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 1.1V @ 750mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.A maximum collector current of 5A volts can be achieved.
BUL381D Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 750mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
BUL381D Applications
There are a lot of STMicroelectronics
BUL381D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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