BUL3N7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Through Hole

Number of Pins :

3

Number of Terminations :

3

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Base Part Number :

BUL3N7

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

18 @ 700mA 5V

Pin Count :

3

Collector Emitter Voltage (VCEO) :

400V

Element Configuration :

Single

Max Collector Current :

3A

Radiation Hardening :

No

Pbfree Code :

yes

Transistor Type :

NPN

ECCN Code :

EAR99

Power - Max :

60W

Emitter Base Voltage (VEBO) :

10V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 1A

Packaging :

Tube

Max Power Dissipation :

60W

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

hFE Min :

10

Collector Base Voltage (VCBO) :

700V

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

400V

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Current - Collector Cutoff (Max) :

100μA

Mount :

Through Hole