BTS132E3045ANTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bulk

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

FET Feature :

-

Surface Mount :

No

Manufacturer :

Infineon Technologies AG

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

96 A

Number of Terminals :

3

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

Channel Type :

N

Series :

TEMPFET®

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id :

24

Number of Elements :

1

DS Breakdown Voltage-Min :

60 V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60 V

Power Dissipation (Max) :

75W

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.065 Ω

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

24A (Tc)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Product Status :

Obsolete

Factory Lead Time :

1 Week

Technology :

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs :

65mOhm @ 12A, 4.5V

Reach Compliance Code :

Unknown

Power Dissipation :

75

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

PG-TO220-3-5

Terminal Form :

THROUGH-HOLE