BTS115ANKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±10V

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Pins :

3

Packaging :

Tube

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Package / Case :

TO-220-3

Power Dissipation-Max :

50W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

Input Capacitance (Ciss) (Max) @ Vds :

735pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

62A

Series :

TEMPFET®

Rds On (Max) @ Id, Vgs :

120m Ω @ 7.8A, 4.5V

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

50V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

50V

Terminal Position :

Single

Number of Terminations :

3

Case Connection :

DRAIN

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

15.5A Tc

Published :

2000

Continuous Drain Current (ID) :

15.5A

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.12Ohm