BTS113ANKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

DS Breakdown Voltage-Min :

60V

Drain to Source Voltage (Vdss) :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

Pulsed Drain Current-Max (IDM) :

46A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Power Dissipation-Max :

40W Tc

Rds On (Max) @ Id, Vgs :

170m Ω @ 5.8A, 4.5V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Series :

TEMPFET®

Case Connection :

DRAIN

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±10V

Continuous Drain Current (ID) :

11.5A

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Mounting Type :

Through Hole

Radiation Hardening :

No

Mount :

Through Hole

Power Dissipation :

40W

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA