BTS114AE3045A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Technology :

MOSFET (Metal Oxide)

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

50 V

Current - Continuous Drain (Id) @ 25°C :

17A (Tc)

Supplier Device Package :

PG-TO220-3-5

Series :

TEMPFET®

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.1 Ω

Terminal Position :

Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Manufacturer :

Rochester Electronics LLC

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

Pin Count :

3

Number of Elements :

1

Operating Temperature :

-55°C ~ 150°C (TJ)

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

68 A

Power Dissipation (Max) :

50W

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

FET Feature :

-

Mounting Type :

Surface Mount

Product Status :

Obsolete

Number of Terminals :

2

Rds On (Max) @ Id, Vgs :

100mOhm @ 9A, 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

50 V

Package :

Bulk

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

Terminal Finish :

NOT SPECIFIED

Package Shape :

RECTANGULAR