BTS121ANKSA1
- Mfr.Part #
- BTS121ANKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 22A TO220-3
- Stock
- 16,854
- In Stock :
- 16,854
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Power Dissipation :
- 95W
- Turn-Off Delay Time :
- 210 ns
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 9.5A, 4.5V
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 110ns
- Terminal Position :
- Single
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 88A
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Series :
- TEMPFET®
- Number of Pins :
- 3
- Vgs (Max) :
- ±10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 10V
- Continuous Drain Current (ID) :
- 22A
- Fall Time (Typ) :
- 100 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Packaging :
- Tube
- Power Dissipation-Max :
- 95W Tc
- Turn On Delay Time :
- 25 ns
- Published :
- 2000
- Datasheets
- BTS121ANKSA1

N-Channel Tube 100m Ω @ 9.5A, 4.5V ±10V 1500pF @ 25V 100V TO-220-3
BTS121ANKSA1 Overview
A device's maximal input capacitance is 1500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 22A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 210 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 88A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V).
BTS121ANKSA1 Features
a continuous drain current (ID) of 22A
the turn-off delay time is 210 ns
based on its rated peak drain current 88A.
a 100V drain to source voltage (Vdss)
BTS121ANKSA1 Applications
There are a lot of Infineon Technologies
BTS121ANKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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