BSS87H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-F3

Mounting Type :

Surface Mount

Power Dissipation-Max :

1W Ta

Terminal Form :

Flat

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1.8V @ 108μA

DS Breakdown Voltage-Min :

240V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Series :

SIPMOS™

Package / Case :

TO-243AA

Vgs (Max) :

±20V

Published :

2011

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

240V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

97pF @ 25V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.29A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Feedback Cap-Max (Crss) :

7.3 pF

FET Type :

N-Channel

Terminal Position :

Single

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6 Ω @ 260mA, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Number of Elements :

1

HTS Code :

8541.29.00.95

Drain-source On Resistance-Max :

6Ohm

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V