BSS87H6327FTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Channels :

1

Power Dissipation :

1W

Input Capacitance (Ciss) (Max) @ Vds :

97pF @ 25V

Drain-source On Resistance-Max :

6Ohm

Threshold Voltage :

1.5V

Drain to Source Breakdown Voltage :

240V

Case Connection :

DRAIN

Terminal Form :

Flat

Mount :

Surface Mount

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Max Dual Supply Voltage :

240V

REACH SVHC :

No SVHC

Turn On Delay Time :

3.7 ns

Pbfree Code :

yes

ECCN Code :

EAR99

Turn-Off Delay Time :

17.6 ns

Fall Time (Typ) :

27.3 ns

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Continuous Drain Current (ID) :

290mA

Published :

1997

Vgs (Max) :

±20V

Height :

1.5mm

Operating Temperature :

-55°C~150°C TJ

Length :

4.5mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

SIPMOS®

Number of Pins :

3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Rise Time :

3.5ns

Width :

2.5mm

Power Dissipation-Max :

1W Ta

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Drain Current-Max (Abs) (ID) :

0.26A

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1.8V @ 108μA

Element Configuration :

Single

Package / Case :

TO-243AA

Rds On (Max) @ Id, Vgs :

6 Ω @ 260mA, 10V

Dual Supply Voltage :

240V

JESD-30 Code :

R-PDSO-F4

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Number of Elements :

1

JESD-609 Code :

e3

Nominal Vgs :

1.5 V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Termination :

SMD/SMT

Lead Free :

Lead Free