BSS87E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Package / Case :

TO-243AA

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

97pF @ 25V

Power Dissipation :

1W

Qualification Status :

Not Qualified

Number of Elements :

1

Series :

SIPMOS®

JESD-609 Code :

e0

Terminal Form :

Flat

Number of Pins :

4

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Rise Time :

10ns

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

290mA

Published :

1999

Voltage - Rated DC :

240V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

6 Ω @ 260mA, 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Vgs(th) (Max) @ Id :

1.8V @ 108μA

Drain Current-Max (Abs) (ID) :

0.29A

Continuous Drain Current (ID) :

260mA

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-F3

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1W Ta

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN