BSS87,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

200V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

400mA

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Threshold Voltage :

2.8V

Transistor Element Material :

SILICON

Power Dissipation-Max :

580mW Ta 12.5W Tc

Published :

2013

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1W

Number of Elements :

1

Resistance :

3Ohm

Transistor Application :

SWITCHING

Weight :

4.535924g

Rds On (Max) @ Id, Vgs :

3 Ω @ 400mA, 10V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Pin Count :

3

Number of Terminations :

3

ECCN Code :

EAR99

Turn On Delay Time :

6 ns

Turn-Off Delay Time :

49 ns

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Drain Current-Max (Abs) (ID) :

0.4A

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Height :

1.6mm

Radiation Hardening :

No

JESD-609 Code :

e3

Number of Pins :

3

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Width :

2.6mm

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Flat

Package / Case :

TO-243AA

Length :

4.6mm

Factory Lead Time :

4 Weeks