BSS84PWH6327XTSA1
- Mfr.Part #
- BSS84PWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 150MA SOT323-3
- Stock
- 435,175
- In Stock :
- 435,175
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 8.6 ns
- ECCN Code :
- EAR99
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Tin
- Length :
- 2mm
- Max Dual Supply Voltage :
- -60V
- Element Configuration :
- Single
- Current Rating :
- -150mA
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 20.5 ns
- Voltage - Rated DC :
- -60V
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Channels :
- 1
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- -150mA
- Turn On Delay Time :
- 6.7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 8 Ω @ 150mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- SIPMOS®
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 300mW Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 19.1pF @ 25V
- Factory Lead Time :
- 10 Weeks
- Drain-source On Resistance-Max :
- 8Ohm
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Packaging :
- Cut Tape (CT)
- Current - Continuous Drain (Id) @ 25°C :
- 150mA Ta
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation :
- 300mW
- Rise Time :
- 16.2ns
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Terminal Position :
- Dual
- Width :
- 1.25mm
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Published :
- 2000
- Height :
- 1mm
- Vgs(th) (Max) @ Id :
- 2V @ 20μA
- Drain to Source Breakdown Voltage :
- -60V
- Datasheets
- BSS84PWH6327XTSA1

P-Channel Cut Tape (CT) 8 Ω @ 150mA, 10V ±20V 19.1pF @ 25V 1.5nC @ 10V 60V SC-70, SOT-323
BSS84PWH6327XTSA1 Description
Infineon Technologies' CoolMOSTM 7th generation platform, based on the superjunction (SJ) principle, is a game-changing technology for high-voltage power MOSFETs. The CoolMOSTM P7 series takes the place of the 600V CoolMOSTM P6 series. The benefits of a fast switching SJ MOSFET with exceptional ease of use are combined with reduced ringing, superior body diode endurance against hard commutation, and outstanding ESD performance.
BSS84PWH6327XTSA1 Features
-
P-Channel
-
Mode of enhancement
-
Avalanche is a rated game.
-
Level of Logic
-
dv/dt
BSS84PWH6327XTSA1 Applications
Switching applications
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