BSS84PWH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Rise Time :

16.2ns

Drain-source On Resistance-Max :

8Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

8.6 ns

Power Dissipation :

300mW

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Mounting Type :

Surface Mount

Fall Time (Typ) :

20.5 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

-150mA

Rds On (Max) @ Id, Vgs :

8 Ω @ 150mA, 10V

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 20μA

Halogen Free :

Halogen Free

Power Dissipation-Max :

300mW Ta

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

150mA Ta

Transistor Element Material :

SILICON

Width :

1.25mm

JESD-609 Code :

e3

Number of Elements :

1

Length :

2mm

Drain to Source Voltage (Vdss) :

60V

Radiation Hardening :

No

Series :

SIPMOS®

Number of Terminations :

3

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

19.1pF @ 25V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Pbfree Code :

yes

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Turn On Delay Time :

6.7 ns

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Published :

2000

Current Rating :

-150mA

Number of Channels :

1

FET Type :

P-Channel

Voltage - Rated DC :

-60V

Number of Pins :

3

Pin Count :

3

Max Dual Supply Voltage :

-60V

Drain to Source Breakdown Voltage :

-60V

Height :

1mm

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SC-70, SOT-323