BSS84PW L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

8 Ω @ 150mA, 10V

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

150mA Ta

JESD-30 Code :

R-PDSO-G3

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

19.1pF @ 25V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Number of Terminations :

3

Terminal Position :

Dual

Number of Elements :

1

Drain-source On Resistance-Max :

8Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pin Count :

3

Reach Compliance Code :

Compliant

Power Dissipation-Max :

300mW Ta

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Feedback Cap-Max (Crss) :

3.8 pF

Series :

SIPMOS®

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.15A

ECCN Code :

EAR99

HTS Code :

8541.21.00.95

Package / Case :

SC-70, SOT-323

Surface Mount :

yes

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2V @ 20μA

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2003

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)