BSS84P-E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2V @ 20μA

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Rise Time :

16.2ns

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

8Ohm

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

360mW

ECCN Code :

EAR99

FET Type :

P-Channel

Voltage - Rated DC :

-60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Qualification Status :

Not Qualified

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

19pF @ 25V

Published :

2002

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

360mW Ta

Current Rating :

-170mA

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

8 Ω @ 170mA, 10V

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Number of Pins :

3

Pin Count :

3

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

170mA

Forward Voltage :

-930mV

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)