BSS84LT1
- Mfr.Part #
- BSS84LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 130MA SOT-23
- Stock
- 2,083,984
- In Stock :
- 2,083,984
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Width :
- 1.397mm
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 3.6 ns
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Threshold Voltage :
- -2V
- Height :
- 1.016mm
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 2 V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Power Dissipation :
- 225mW
- Resistance :
- 10Ohm
- Factory Lead Time :
- 23 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 30pF @ 5V
- Length :
- 3.0226mm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 1 ns
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 225mW Ta
- Vgs (Max) :
- ±20V
- Contact Plating :
- Tin
- Published :
- 2004
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 100mA, 5V
- Drain to Source Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 130mA
- Turn-Off Delay Time :
- 16 ns
- Voltage - Rated DC :
- -50V
- Rise Time :
- 1ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current Rating :
- -130mA
- Datasheets
- BSS84LT1

P-Channel Cut Tape (CT) 10 Ω @ 100mA, 5V ±20V 30pF @ 5V TO-236-3, SC-59, SOT-23-3
The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications. The ON Semiconductor MOSFET is a P channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.?
BSS84LT1G Features
? SOT?23 Surface Mount Package Saves Board Space
? BV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
BSS84LT1G Applications
Load Switching
Inverters
Rectifiers
Motor drives
DC choppers
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