BSS84AKW,115
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- Mfr.Part #
- BSS84AKW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 150MA SOT323
- Stock
- 583,103
- In Stock ：
- 583,103
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Dual Supply Voltage :
- -50V
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 100mA, 10V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 0.35nC @ 5V
- Turn-Off Delay Time :
- 48 ns
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- SC-70, SOT-323
- Surface Mount :
- yes
- Rise Time :
- 11ns
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 150mA Ta
- Continuous Drain Current (ID) :
- 150mA
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- -50V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 50V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Resistance :
- 7.5Ohm
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 36pF @ 25V
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 260mW
- Published :
- 2011
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 260mW Ta 830mW Tc
- Number of Elements :
- 1
- Fall Time (Typ) :
- 25 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 13 ns
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Datasheets
- BSS84AKW,115
P-Channel Tape & Reel (TR) 7.5 Ω @ 100mA, 10V ±20V 36pF @ 25V 0.35nC @ 5V 50V SC-70, SOT-323
BSS84AKW,115 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 36pF @ 25V.This device conducts a continuous drain current (ID) of 150mA, which is the maximum continuous current transistor can conduct.Using VGS=-50V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -50V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -50V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BSS84AKW,115 Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)
BSS84AKW,115 Applications
There are a lot of Nexperia USA Inc.
BSS84AKW,115 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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