BSS84AKMB,315

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Mfr.Part #
BSS84AKMB,315
Manufacturer
Nexperia
Package / Case
3-XFDFN
Datasheet
Download
Description
MOSFET P-CH 50V 230MA DFN1006B-3
Stock
39,410
In Stock :
39,410

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Rise Time :
11ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2012
Power Dissipation-Max :
360mW Ta 2.7W Tc
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.1V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Contact Plating :
Tin
Fall Time (Typ) :
25 ns
Turn On Delay Time :
13 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
50V
Current - Continuous Drain (Id) @ 25°C :
230mA Ta
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
48 ns
Max Dual Supply Voltage :
-50V
Rds On (Max) @ Id, Vgs :
7.5 Ω @ 100mA, 10V
FET Type :
P-Channel
Drain to Source Breakdown Voltage :
-50V
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
36pF @ 25V
Package / Case :
3-XFDFN
Gate Charge (Qg) (Max) @ Vgs :
0.35nC @ 5V
JESD-609 Code :
e3
Power Dissipation :
715mW
Factory Lead Time :
8 Weeks
Continuous Drain Current (ID) :
230mA
Introducing Transistors - FETs, MOSFETs - Single Nexperia BSS84AKMB,315 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:3-XFDFN, BSS84AKMB,315 pinout, BSS84AKMB,315 datasheet PDF, BSS84AKMB,315 amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia BSS84AKMB,315 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BSS84AKMB,315


P-Channel Tape & Reel (TR) 7.5 Ω @ 100mA, 10V ±20V 36pF @ 25V 0.35nC @ 5V 50V 3-XFDFN

BSS84AKMB,315 Overview


The maximum input capacitance of this device is 36pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.When VGS=-50V, and ID flows to VDS at -50VVDS, the drain-source breakdown voltage is -50V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -50V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 50V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

BSS84AKMB,315 Features


a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)


BSS84AKMB,315 Applications


There are a lot of Nexperia USA Inc.
BSS84AKMB,315 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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