BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 130MA SOT23-3
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Voltage :
- 50V
- Dual Supply Voltage :
- -50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Published :
- 2013
- Drain to Source Voltage (Vdss) :
- 50V
- Height :
- 930μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- -1.7 V
- Rise Time :
- 6.3ns
- Length :
- 2.92mm
- FET Type :
- P-Channel
- Input Capacitance :
- 73pF
- Number of Pins :
- 3
- Turn On Delay Time :
- 2.5 ns
- Supplier Device Package :
- SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Drain to Source Breakdown Voltage :
- -50V
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Fall Time (Typ) :
- 6.3 ns
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 360mW Ta
- Current :
- 13A
- Turn-Off Delay Time :
- 10 ns
- Voltage - Rated DC :
- -50V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 360mW
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Resistance :
- 10Ohm
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 10Ohm
- Current Rating :
- -130mA
- Termination :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Width :
- 3.05mm
- Continuous Drain Current (ID) :
- 130mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Threshold Voltage :
- -1.7V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Rds On Max :
- 10 Ω
- Datasheets
- BSS84

P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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