BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- P-CH MOSFET 60V 0.17A SOT-23-3L
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 6.3ns
- FET Type :
- P-Channel
- Element Configuration :
- Single
- Resistance :
- 10Ohm
- Number of Pins :
- 3
- Dual Supply Voltage :
- -50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Power Dissipation :
- 360mW
- Turn On Delay Time :
- 2.5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Threshold Voltage :
- -1.7V
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Mounting Type :
- Surface Mount
- Width :
- 3.05mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current :
- 13A
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 130mA
- Rds On Max :
- 10 Ω
- Voltage - Rated DC :
- -50V
- Length :
- 2.92mm
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 10 ns
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Fall Time (Typ) :
- 6.3 ns
- Radiation Hardening :
- No
- Height :
- 930μm
- Mount :
- Surface Mount
- Input Capacitance :
- 73pF
- Drain to Source Voltage (Vdss) :
- 50V
- Power Dissipation-Max :
- 360mW Ta
- Drain to Source Resistance :
- 10Ohm
- Supplier Device Package :
- SOT-23-3
- Termination :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- -1.7 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Current Rating :
- -130mA
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- -50V
- Voltage :
- 50V
- Max Operating Temperature :
- 150°C
- REACH SVHC :
- No SVHC
- Datasheets
- BSS84

P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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