BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 130MA DIE
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 6.3 ns
- Number of Elements :
- 1
- Current Rating :
- -130mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Continuous Drain Current (ID) :
- 130mA
- Height :
- 930μm
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 50V
- Drain to Source Resistance :
- 10Ohm
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 10 ns
- Radiation Hardening :
- No
- Current :
- 13A
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 360mW
- Termination :
- SMD/SMT
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Contact Plating :
- Tin
- Input Capacitance :
- 73pF
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 10 Ω
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -50V
- Drain to Source Breakdown Voltage :
- -50V
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Published :
- 2013
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Length :
- 2.92mm
- Resistance :
- 10Ohm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage :
- 50V
- Dual Supply Voltage :
- -50V
- Threshold Voltage :
- -1.7V
- Rise Time :
- 6.3ns
- Mount :
- Surface Mount
- Turn On Delay Time :
- 2.5 ns
- Power Dissipation-Max :
- 360mW Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Nominal Vgs :
- -1.7 V
- Width :
- 3.05mm
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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