BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 130MA DIE
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 10Ohm
- Power Dissipation-Max :
- 360mW Ta
- Length :
- 2.92mm
- Turn-Off Delay Time :
- 10 ns
- Supplier Device Package :
- SOT-23-3
- Resistance :
- 10Ohm
- Dual Supply Voltage :
- -50V
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 6.3 ns
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- FET Type :
- P-Channel
- Rise Time :
- 6.3ns
- Contact Plating :
- Tin
- Height :
- 930μm
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 130mA
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Current :
- 13A
- RoHS Status :
- ROHS3 Compliant
- Voltage :
- 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Input Capacitance :
- 73pF
- Voltage - Rated DC :
- -50V
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Power Dissipation :
- 360mW
- Current Rating :
- -130mA
- Published :
- 2013
- Threshold Voltage :
- -1.7V
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Drain to Source Breakdown Voltage :
- -50V
- Rds On Max :
- 10 Ω
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Drain to Source Voltage (Vdss) :
- 50V
- Turn On Delay Time :
- 2.5 ns
- Radiation Hardening :
- No
- Termination :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Nominal Vgs :
- -1.7 V
- Width :
- 3.05mm
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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