BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- P-CHANNEL ENHANCEMENT MODE MOSFE
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- ANBON SEMICONDUCTOR (INT'L) LIMITED
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- -50V
- Current Rating :
- -130mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Nominal Vgs :
- -1.7 V
- Supplier Device Package :
- SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 2.5 ns
- Continuous Drain Current (ID) :
- 130mA
- Width :
- 3.05mm
- Power Dissipation-Max :
- 360mW Ta
- Fall Time (Typ) :
- 6.3 ns
- Power Dissipation :
- 360mW
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Rds On Max :
- 10 Ω
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- -50V
- Factory Lead Time :
- 8 Weeks
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Termination :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- FET Type :
- P-Channel
- Rise Time :
- 6.3ns
- Mount :
- Surface Mount
- Input Capacitance :
- 73pF
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Drain to Source Voltage (Vdss) :
- 50V
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Dual Supply Voltage :
- -50V
- Resistance :
- 10Ohm
- Vgs (Max) :
- ±20V
- Current :
- 13A
- Published :
- 2013
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 930μm
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 10 ns
- Voltage :
- 50V
- Drain to Source Resistance :
- 10Ohm
- Number of Pins :
- 3
- Length :
- 2.92mm
- Threshold Voltage :
- -1.7V
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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