BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- P-CHANNEL ENHANCEMENT MODE MOSFE
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- ANBON SEMICONDUCTOR (INT'L) LIMITED
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 10Ohm
- Continuous Drain Current (ID) :
- 130mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Rise Time :
- 6.3ns
- Termination :
- SMD/SMT
- Width :
- 3.05mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Input Capacitance :
- 73pF
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Fall Time (Typ) :
- 6.3 ns
- Element Configuration :
- Single
- Published :
- 2013
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Length :
- 2.92mm
- Current :
- 13A
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- SOT-23-3
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 10 ns
- Max Operating Temperature :
- 150°C
- Factory Lead Time :
- 8 Weeks
- Resistance :
- 10Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Rds On Max :
- 10 Ω
- Power Dissipation-Max :
- 360mW Ta
- Height :
- 930μm
- Drain to Source Voltage (Vdss) :
- 50V
- Voltage :
- 50V
- Threshold Voltage :
- -1.7V
- Current Rating :
- -130mA
- Turn On Delay Time :
- 2.5 ns
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Voltage - Rated DC :
- -50V
- Lead Free :
- Lead Free
- Power Dissipation :
- 360mW
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- -50V
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- -1.7 V
- Packaging :
- Tape and Reel (TR)
- Dual Supply Voltage :
- -50V
- Datasheets
- BSS84
BSS84 Documents
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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