BSS84,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

3 ns

Rds On (Max) @ Id, Vgs :

10 Ω @ 130mA, 10V

ECCN Code :

EAR99

Number of Terminations :

3

Height :

1.1mm

Number of Elements :

1

Drain to Source Breakdown Voltage :

-50V

JESD-609 Code :

e3

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

50V

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

7 ns

Terminal Form :

Gull wing

Number of Channels :

1

Power Dissipation-Max :

250mW Tc

Package / Case :

TO-236-3, SC-59, SOT-23-3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

Published :

2008

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Power Dissipation :

250mW

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Continuous Drain Current (ID) :

-130mA

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

130mA Ta

Max Junction Temperature (Tj) :

150°C