BSS84,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

250mW Tc

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Turn-Off Delay Time :

7 ns

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

10 Ω @ 130mA, 10V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

-130mA

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

250mW

Drain to Source Voltage (Vdss) :

50V

Mounting Type :

Surface Mount

Pin Count :

3

Operating Temperature :

-65°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Height :

1.1mm

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Turn On Delay Time :

3 ns

ECCN Code :

EAR99

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Surface Mount :

yes

Drain to Source Breakdown Voltage :

-50V

Number of Elements :

1

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

130mA Ta