BSS315PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

282pF @ 15V

Series :

OptiMOS™

Turn-Off Delay Time :

14.3 ns

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Turn On Delay Time :

5 ns

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Halogen Free :

Halogen Free

Number of Elements :

1

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power Dissipation :

500mW

Terminal Form :

Gull wing

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

150m Ω @ 1.5A, 10V

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 5V

Height :

1mm

Pin Count :

3

Length :

2.9mm

Power Dissipation-Max :

500mW Ta

ECCN Code :

EAR99

Max Dual Supply Voltage :

-30V

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

JESD-609 Code :

e3

Number of Pins :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2V @ 11μA

Element Configuration :

Single

Rise Time :

6.5ns

Gate to Source Voltage (Vgs) :

20V

Width :

1.3mm

Feedback Cap-Max (Crss) :

84 pF

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Vgs (Max) :

±20V

Radiation Hardening :

No

Pbfree Code :

yes

Published :

2011

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

1.18A