BSS306NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Turn-Off Delay Time :

8.3 ns

Drain to Source Breakdown Voltage :

30V

Number of Pins :

3

Number of Terminations :

3

Rise Time :

2.3ns

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

57m Ω @ 2.3A, 10V

Pin Count :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 11μA

Terminal Position :

Dual

Number of Channels :

1

Threshold Voltage :

1.2V

Power Dissipation :

500mW

Vgs (Max) :

±20V

Mount :

Surface Mount

Terminal Form :

Gull wing

Lead Free :

Lead Free

Turn On Delay Time :

4.4 ns

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Height :

1.1mm

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 5V

Power Dissipation-Max :

500mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 15V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Max Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

10 Weeks

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

2.3A

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pbfree Code :

yes

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.057Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer Package Identifier :

PG-SOT23