BSS314PEH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 6.3µA

Published :

2012

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 10V

Rise Time :

3.9ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Vgs (Max) :

±20V

Pin Count :

3

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

294pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

500mW Ta

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Radiation Hardening :

No

Number of Pins :

3

Pbfree Code :

yes

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

FET Type :

P-Channel

Mounting Type :

Surface Mount

Power Dissipation :

500mW

Terminal Position :

Dual

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

1.5A

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.5A, 10V

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

-30V