BSS308PEH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 11μA

Element Configuration :

Single

Lead Free :

Lead Free

Length :

2.9mm

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Radiation Hardening :

No

JESD-609 Code :

e3

Terminal Position :

Dual

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

2A

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Terminal Form :

Gull wing

Height :

1mm

Power Dissipation :

500mW

Continuous Drain Current (ID) :

1.6A

Number of Elements :

1

FET Type :

P-Channel

Halogen Free :

Halogen Free

Turn On Delay Time :

5.6 ns

Operating Temperature :

-55°C~150°C TJ

Published :

2011

Drain-source On Resistance-Max :

0.08Ohm

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Width :

1.3mm

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

500mW Ta

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

-30V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

15.3 ns

Series :

OptiMOS™

Rise Time :

7.7ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3