BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- N-CH MOSFET 100V 0.2A SOT-23-3L
- Stock
- 47,831
- In Stock :
- 47,831
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Base Part Number :
- BSS123
- Published :
- 2003
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Dual Supply Voltage :
- 100V
- Voltage :
- 100V
- Continuous Drain Current (ID) :
- 170mA
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 360mW Ta
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 1.2Ohm
- Resistance :
- 6Ohm
- Threshold Voltage :
- 1.7V
- Current :
- 15A
- Drain to Source Breakdown Voltage :
- 100V
- Drain to Source Voltage (Vdss) :
- 100V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 17 ns
- Current Rating :
- 170mA
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Radiation Hardening :
- No
- Length :
- 2.92mm
- FET Type :
- N-Channel
- Rise Time :
- 9ns
- REACH SVHC :
- No SVHC
- Width :
- 1.3mm
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Number of Channels :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- SOT-23-3
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 360mW
- Fall Time (Typ) :
- 9 ns
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 1.7 ns
- Input Capacitance :
- 73pF
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 100V
- Max Junction Temperature (Tj) :
- 150°C
- Number of Elements :
- 1
- Height :
- 1.11mm
- Nominal Vgs :
- 1.7 V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Factory Lead Time :
- 8 Weeks
- Rds On Max :
- 6 Ω
- Datasheets
- BSS123

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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