BSS119NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Mount :

Surface Mount

Series :

OptiMOS™

Factory Lead Time :

10 Weeks

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rise Time :

3.3ns

Rds On (Max) @ Id, Vgs :

6 Ω @ 190mA, 10V

Pbfree Code :

yes

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

2.3V @ 13μA

Halogen Free :

Halogen Free

Number of Pins :

3

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

20.9pF @ 25V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

190mA Ta

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

Contact Plating :

Tin

Turn On Delay Time :

2.7 ns

Gate to Source Voltage (Vgs) :

20V

Length :

2.9mm

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

7 ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Dual Supply Voltage :

100V

Power Dissipation-Max :

500mW Ta

Continuous Drain Current (ID) :

190mA

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

6Ohm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

18.8 ns

Drain to Source Breakdown Voltage :

100V

Number of Channels :

1

Width :

1.3mm

Published :

2002

Lead Free :

Lead Free

Power Dissipation :

500mW

Height :

1.1mm