BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 N 100V 0.2A Transistors
- Stock
- 15,000
- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 9ns
- Radiation Hardening :
- No
- Published :
- 2003
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- REACH SVHC :
- No SVHC
- Input Capacitance :
- 73pF
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 1.7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Nominal Vgs :
- 1.7 V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Operating Temperature :
- 150°C
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Junction Temperature (Tj) :
- 150°C
- Rds On Max :
- 6 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Mount :
- Surface Mount
- Threshold Voltage :
- 1.7V
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 17 ns
- Voltage - Rated DC :
- 100V
- Current :
- 15A
- Element Configuration :
- Single
- Power Dissipation-Max :
- 360mW Ta
- Current Rating :
- 170mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Length :
- 2.92mm
- Min Operating Temperature :
- -55°C
- Height :
- 1.11mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Fall Time (Typ) :
- 9 ns
- Number of Elements :
- 1
- Width :
- 1.3mm
- Voltage :
- 100V
- Contact Plating :
- Tin
- Dual Supply Voltage :
- 100V
- Power Dissipation :
- 360mW
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Drain to Source Breakdown Voltage :
- 100V
- Drain to Source Voltage (Vdss) :
- 100V
- Drain to Source Resistance :
- 1.2Ohm
- Resistance :
- 6Ohm
- Base Part Number :
- BSS123
- Continuous Drain Current (ID) :
- 170mA
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Supplier Device Package :
- SOT-23-3
- Datasheets
- BSS123
N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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