BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 N 100V 0.2A Transistors
- Stock
- 15,000
- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Input Capacitance :
- 73pF
- Threshold Voltage :
- 1.7V
- Max Operating Temperature :
- 150°C
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Continuous Drain Current (ID) :
- 170mA
- Number of Pins :
- 3
- Width :
- 1.3mm
- Power Dissipation-Max :
- 360mW Ta
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Nominal Vgs :
- 1.7 V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Voltage (Vdss) :
- 100V
- Published :
- 2003
- Min Operating Temperature :
- -55°C
- Max Junction Temperature (Tj) :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.92mm
- Mount :
- Surface Mount
- Power Dissipation :
- 360mW
- FET Type :
- N-Channel
- Supplier Device Package :
- SOT-23-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Dual Supply Voltage :
- 100V
- Fall Time (Typ) :
- 9 ns
- Resistance :
- 6Ohm
- Current :
- 15A
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Factory Lead Time :
- 8 Weeks
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Element Configuration :
- Single
- Base Part Number :
- BSS123
- Height :
- 1.11mm
- Rds On Max :
- 6 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 1.2Ohm
- Turn On Delay Time :
- 1.7 ns
- Turn-Off Delay Time :
- 17 ns
- Drain to Source Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage :
- 100V
- Lead Free :
- Lead Free
- Current Rating :
- 170mA
- Rise Time :
- 9ns
- Datasheets
- BSS123
N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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