BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 N 100V 0.2A Transistors
- Stock
- 15,000
- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 17 ns
- Factory Lead Time :
- 8 Weeks
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Width :
- 1.3mm
- Resistance :
- 6Ohm
- Fall Time (Typ) :
- 9 ns
- Contact Plating :
- Tin
- Power Dissipation :
- 360mW
- Voltage - Rated DC :
- 100V
- Input Capacitance :
- 73pF
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 100V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Current :
- 15A
- Dual Supply Voltage :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- REACH SVHC :
- No SVHC
- Current Rating :
- 170mA
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 1.2Ohm
- Height :
- 1.11mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On Max :
- 6 Ω
- Rise Time :
- 9ns
- Nominal Vgs :
- 1.7 V
- Number of Elements :
- 1
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 1.7V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Supplier Device Package :
- SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BSS123
- Published :
- 2003
- Mount :
- Surface Mount
- Length :
- 2.92mm
- Max Junction Temperature (Tj) :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 360mW Ta
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 100V
- Voltage :
- 100V
- Turn On Delay Time :
- 1.7 ns
- Continuous Drain Current (ID) :
- 170mA
- Datasheets
- BSS123
N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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