BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170MA SOT23-3
- Stock
- 31,754
- In Stock :
- 31,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 360mW
- Base Part Number :
- BSS123
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Drain to Source Resistance :
- 1.2Ohm
- Voltage :
- 100V
- Nominal Vgs :
- 1.7 V
- Published :
- 2003
- Rds On Max :
- 6 Ω
- Max Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Element Configuration :
- Single
- Current :
- 15A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Length :
- 2.92mm
- Voltage - Rated DC :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain to Source Voltage (Vdss) :
- 100V
- Contact Plating :
- Tin
- Turn On Delay Time :
- 1.7 ns
- Supplier Device Package :
- SOT-23-3
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Dual Supply Voltage :
- 100V
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 170mA
- Turn-Off Delay Time :
- 17 ns
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation-Max :
- 360mW Ta
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Drain to Source Breakdown Voltage :
- 100V
- Input Capacitance :
- 73pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Width :
- 1.3mm
- Mount :
- Surface Mount
- Height :
- 1.11mm
- Threshold Voltage :
- 1.7V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 9 ns
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 6Ohm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 9ns
- Min Operating Temperature :
- -55°C
- Current Rating :
- 170mA
- Datasheets
- BSS123
BSS123 Documents

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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