BSS123
- Mfr.Part #
- BSS123
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170MA SOT23-3
- Stock
- 31,754
- In Stock :
- 31,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Max Operating Temperature :
- 150°C
- Resistance :
- 6Ohm
- Base Part Number :
- BSS123
- Drain to Source Breakdown Voltage :
- 100V
- Supplier Device Package :
- SOT-23-3
- Drain to Source Resistance :
- 1.2Ohm
- Rise Time :
- 9ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 360mW Ta
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 170mA
- Mount :
- Surface Mount
- Height :
- 1.11mm
- Turn-Off Delay Time :
- 17 ns
- Turn On Delay Time :
- 1.7 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 100V
- REACH SVHC :
- No SVHC
- Input Capacitance :
- 73pF
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Number of Pins :
- 3
- Published :
- 2003
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Number of Elements :
- 1
- Current Rating :
- 170mA
- Max Junction Temperature (Tj) :
- 150°C
- Fall Time (Typ) :
- 9 ns
- Number of Channels :
- 1
- Voltage :
- 100V
- Threshold Voltage :
- 1.7V
- Nominal Vgs :
- 1.7 V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Element Configuration :
- Single
- Width :
- 1.3mm
- Current :
- 15A
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation :
- 360mW
- Rds On Max :
- 6 Ω
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Length :
- 2.92mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Dual Supply Voltage :
- 100V
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 170mA, 10V
- Datasheets
- BSS123

N-Channel Tape & Reel (TR) 6Ohm @ 170mA, 10V ±20V 73pF @ 25V 2.5nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
BSS123 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.
BSS123 Features
RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V
RDS(ON) = 10W @ 4.5 V VGS
For extremely low RDS, a high-density cell design is used (ON)
Rugged and dependable
SOT-23 surface mount package is a compact industry standard.
BSS123 Applications
Switching applications.
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