BSR41,115

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Mfr.Part #
BSR41,115
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 60V 1A SOT89
Stock
93,254
In Stock :
93,254

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
60V
Contact Plating :
Tin
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
JESD-30 Code :
R-PSSO-F3
Max Power Dissipation :
1.35W
Transistor Application :
SWITCHING
Case Connection :
COLLECTOR
Mounting Type :
Surface Mount
Base Part Number :
BSR41
Element Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 5V
Pin Count :
3
Terminal Form :
Flat
RoHS Status :
ROHS3 Compliant
Published :
2009
Operating Temperature :
150°C TJ
Transistor Type :
NPN
Transistor Element Material :
SILICON
Number of Terminations :
3
Factory Lead Time :
4 Weeks
Number of Pins :
4
Current - Collector Cutoff (Max) :
100nA ICBO
Mount :
Surface Mount
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Max Collector Current :
1A
Number of Elements :
1
Power Dissipation :
1.35W
Transition Frequency :
100MHz
Max Breakdown Voltage :
60V
Emitter Base Voltage (VEBO) :
5V
Package / Case :
TO-243AA
Lead Free :
Lead Free
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
70V
Frequency :
100MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain Bandwidth Product :
100MHz
Collector Emitter Voltage (VCEO) :
60V
Polarity/Channel Type :
NPN
Datasheets
BSR41,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia BSR41,115 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:BSR41, Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:4, Package / Case:TO-243AA, BSR41,115 pinout, BSR41,115 datasheet PDF, BSR41,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia BSR41,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BSR41,115


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

BSR41,115 Overview


In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.

BSR41,115 Features


the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BSR41,115 Applications


There are a lot of Nexperia USA Inc.
BSR41,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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