BSR43TA
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- Mfr.Part #
- BSR43TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT89-3
- Stock
- 13,877
- In Stock ：
- 13,877
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 50
- Termination :
- SMD/SMT
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 51.993025mg
- Terminal Form :
- Flat
- Width :
- 2.5mm
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Current Rating :
- -1A
- Voltage - Rated DC :
- -80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- Factory Lead Time :
- 14 Weeks
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1W
- Element Configuration :
- Single
- Base Part Number :
- BSR43
- Package / Case :
- TO-243AA
- Collector Emitter Breakdown Voltage :
- 80V
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Pbfree Code :
- No
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.5mm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 500mV
- Length :
- 4.5mm
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 90V
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Published :
- 2006
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Datasheets
- BSR43TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BSR43TA Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BSR43TA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
BSR43TA Applications
There are a lot of Diodes Incorporated
BSR43TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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