BSR41,115
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- Mfr.Part #
- BSR41,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- NEXPERIA BSR41 - POWER BIPOLAR T
- Stock
- 93,254
- In Stock ：
- 93,254
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Power Dissipation :
- 1.35W
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Base Part Number :
- BSR41
- Lead Free :
- Lead Free
- Package / Case :
- TO-243AA
- Collector Base Voltage (VCBO) :
- 70V
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-F3
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1.35W
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Packaging :
- Tape and Reel (TR)
- Published :
- 2009
- Frequency :
- 100MHz
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 60V
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Datasheets
- BSR41,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BSR41,115 Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BSR41,115 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BSR41,115 Applications
There are a lot of Nexperia USA Inc.
BSR41,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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