BSM120D12P2C005

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Width :

45.6mm

Height :

21.1mm

Number of Pins :

10

Threshold Voltage :

2.7V

Vgs(th) (Max) @ Id :

2.7V @ 22mA

Nominal Vgs :

2.7 V

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Package / Case :

Module

Length :

122mm

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Gate to Source Voltage (Vgs) :

22V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JESD-30 Code :

R-XUFM-X8

Mount :

Screw

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

Max Power Dissipation :

780W

FET Feature :

Silicon Carbide (SiC)

Continuous Drain Current (ID) :

120A

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

Factory Lead Time :

25 Weeks

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

FET Type :

2 N-Channel (Half Bridge)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 10V

Pulsed Drain Current-Max (IDM) :

240A

Number of Elements :

2

Number of Channels :

1